MKB4118P-83 of St Microelectronics Ltd under NSN 5962-01-113-7050

Part Number: MKB4118P-83

Alternate P/N: MKB4118P83

Manufacturer: St Microelectronics Ltd

NSN: 5962-01-113-7050

NIIN: 011137050

Item Name : Microcircuitmemory

CAGE Code: 50088

FSC: 5962 Microcircuits Electronic

FSG: 59 Electrical and Electronic Equipment Components

Country: USA

NCB Code: 01

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Characteristics Data of NSN 5962-01-113-7050, 5962011137050

MRC	Criteria	Characteristic
CZEQ	Time Rating Per Chacteristic	200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
AFJQ	Storage Temp Range	-65.0/+150.0 DEG CELSIUS
CQZP	Input Circuit Pattern	18 INPUT
TEST	Test Data Document	13973-839201-0018 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
CQSJ	Inclosure Material	CERAMIC
MRC	Decoded Requirement	Clear Text Reply
TTQY	Terminal Type And Quantity	24 PRINTED CIRCUIT
ADAT	Body Width	0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CBBL	Features Provided	HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED
CWSG	Terminal Surface Treatment	SOLDER
ADAQ	Body Length	1.290 INCHES MAXIMUM
AEHX	Maximum Power Dissipation Rating	1.0 WATTS
ADAU	Body Height	0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
CTFT	Case Outline Source And Designator	D-3 MIL-M-38510
AFGA	Operating Temp Range	+0.0/+70.0 DEG CELSIUS
CQSZ	Inclosure Configuration	DUAL-IN-LINE
CZER	Memory Device Type	RAM
CZEN	Voltage Rating And Type Per Characteristic	7.0 VOLTS MAXIMUM POWER SOURCE
CQWX	Output Logic Form	N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC