G101960-863 of Raytheon Company under NSN 5962-01-314-9189

Part Number: G101960-863

Alternate P/N: G101960863

Manufacturer: Raytheon Company

NSN: 5962-01-314-9189

NIIN: 013149189

Item Name : Microcircuit Memory

CAGE Code: 3B150

FSC: 5962 Microcircuits Electronic

FSG: 59 Electrical and Electronic Equipment Components

Country: USA

NCB Code: 01

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NSN Information for Part Number G101960-863 with NSN 5962-01-314-9189, 5962013149189

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-314-9189 Item PartTypeName: MICROCIRCUIT,MEMORY	5962	013149189	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
93L422	2	1	5

Characteristics Data of NSN 5962-01-314-9189, 5962013149189

MRC	Criteria	Characteristic
AEHX	MAXIMUM POWER DISSIPATION RATING	495.0 MILLIWATTS
AFGA	OPERATING TEMP RANGE	-55.0 TO 125.0 DEG CELSIUS
AFJQ	STORAGE TEMP RANGE	-65.0 TO 150.0 DEG CELSIUS
CBBL	FEATURES PROVIDED	ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND MONOLITHIC
CQSJ	INCLOSURE MATERIAL	CERAMIC
CQSZ	INCLOSURE CONFIGURATION	LEADLESS FLAT PACK
CQWX	OUTPUT LOGIC FORM	TRANSISTOR-TRANSISTOR LOGIC
CQZP	INPUT CIRCUIT PATTERN	16 INPUT
CWSG	TERMINAL SURFACE TREATMENT	SOLDER
CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC	7.0 VOLTS MAXIMUM POWER SOURCE
CZEQ	TIME RATING PER CHACTERISTIC	75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT
CZER	MEMORY DEVICE TYPE	RAM
TEST	TEST DATA DOCUMENT	96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.).
TTQY	TERMINAL TYPE AND QUANTITY	28 LEADLESS