Thank you for taking an interest in our selection of 5962-01-486-7195 parts here on Boost AOG. You are currently on the RFQ form for part number IDT6116LA150DB, a Integrated Device Technology Inc product listed with the Microcircuit Memory If part number IDT6116LA150DB catches your eye, be sure to use our online RFQ service to request quotes, with customized responses provided within 15 minutes of us receiving and reviewing a completed submission.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-486-7195 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014867195 | N | A | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| A | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| IDT6116LA150DB | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CZEN | Voltage Rating And Type Per Characteristic | 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY |
| CTQX | Current Rating Per Characteristic | 85.00 MILLIAMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE MINOR |
| CZEP | Capitance Rating Per Characteristic | 8.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM |
| CZEQ | Time Rating Per Chacteristic | 150.00 NANOSECONDS MAXIMUM ACCESS |
| MRC | Decoded Requirement | Clear Text Reply |
| FEAT | Special Features | INPUT AND OUTPUT TTL COMPATIBLE; BATTERY BACKUP OPERATION - 2 VOLT; 600 MIL CERAMIC DUAL-IN-LINE PACKAGING |
| CBBL | Features Provided | ASYNCHRONOUS AND HIGH SPEED AND LOW POWER AND STATIC OPERATION AND TESTED TO MIL-STD-883 |
| AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
| TTQY | Terminal Type And Quantity | 24 PRINTED CIRCUIT |
| CQSJ | Inclosure Material | CERAMIC |
| ADAT | Body Width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CXCY | Part Name Assigned By Controlling Agency | CMOS STATIC RAM, 16K (2K BY 8-BIT) |
| ADAQ | Body Length | 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM |
| AEHX | Maximum Power Dissipation Rating | 1.0 WATTS |
| ADAU | Body Height | 0.075 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| CQSZ | Inclosure Configuration | DUAL-IN-LINE |
| AFGA | Operating Temp Range | -55.0/+125.0 DEG CELSIUS |
| CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZER | Memory Device Type | RAM |
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