Thank you for taking an interest in our selection of 5962-01-468-5930 parts here on Boost AOG. You are currently on the RFQ form for part number CY7C335-83WMB, a Cypress Semiconductor Inc product listed with the Microcircuit Memory If part number CY7C335-83WMB catches your eye, be sure to use our online RFQ service to request quotes, with customized responses provided within 15 minutes of us receiving and reviewing a completed submission.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-468-5930 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014685930 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-9451003MXA | 5 | 2 | 2 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.1 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT" |
| CZER | MEMORY DEVICE TYPE | EPROM" |
| FEAT | SPECIAL FEATURES | GENERIC P/N 7C335, CIRCUIT FUNCTION-12 MACROCELL EPLD, FMAX3-83 MHZ, DATA RETENTION-10 YEARS MINIMUM, ENDURANCE-25 ERASE/WRITE CYCLES MINIMUM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.1 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT" |
| CZER | MEMORY DEVICE TYPE | EPROM" |
| FEAT | SPECIAL FEATURES | GENERIC P/N 7C335, CIRCUIT FUNCTION-12 MACROCELL EPLD, FMAX3-83 MHZ, DATA RETENTION-10 YEARS MINIMUM, ENDURANCE-25 ERASE/WRITE CYCLES MINIMUM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
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