If you are looking for NSN 5962-01-359-0333 supplies, turn to Boost AOG and our vast collection of offerings. On this page, we have arranged our NSN 5962-01-359-0333 inventory, where part numbers like 330517-001, CY7C161A-25DBM, CY7C161A-45DMB, P4C1981-25CMB, P4C1981-25CMB M0296, and others are presented alongside relevant information about this NSN for your perusal. Take the time to browse our ever-expanding selection of components as you see fit, and if any particular items pique your interest, be sure to use our online RFQ service to request quotes for your consideration.
All manufacturers and suppliers whose parts we sell are carefully evaluated by our staff as necessary, and a myriad of products we carry are subjected to diverse levels of testing and inspection for fit, form, and function. Additionally, we are fully committed to addressing the time limitations of our customers who shop on Boost AOG, providing options for accelerated shipping based on availability. Keeping this in mind, do not hesitate to reach out to us directly by phone or email, and our knowledgeable team members would be more than happy to help you obtain the NSN 5962-01-359-0333 parts you desire.
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-359-0333 (013590333) |
| NCB Code | USA (01) |
| Manufacturer | Bae Systems Inc, Performance Semiconductor Corp, Pyramid Semiconductor Corp, Cypress Semiconductor Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 330517-001 | bae systems inc | microcircuit memory | 81413 | RFQ |
| CY7C161A-25DBM | performance semiconductor corp | microcircuit memory | 0k894 | RFQ |
| CY7C161A-25DBM | pyramid semiconductor corp | microcircuit memory | 3dtt2 | RFQ |
| CY7C161A-25DBM | cypress semiconductor inc | microcircuit memory | 65786 | RFQ |
| CY7C161A-45DMB | cypress semiconductor inc | microcircuit memory | 65786 | RFQ |
| P4C1981-25CMB | pyramid semiconductor corp | microcircuit memory | 3dtt2 | RFQ |
| P4C1981-25CMB M0296 | pyramid semiconductor corp | microcircuit memory | 3dtt2 | RFQ |
| P4C1981-25DMB | performance semiconductor corp | microcircuit memory | 0k894 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND PROGRAMMED AND MONOLITHIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 385.0 MILLIWATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZER | MEMORY DEVICE TYPE | RAM |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Relevant Components for NSN - 5962-01-359-0333, 5962013590333 | ||||
| 5935-01-371-6492 (5935013716492) | 5935-00-490-0271 (5935004900271) | 5975-01-193-4104 (5975011934104) | 5962-01-333-0459 (5962013330459) | |
| 5962-01-169-6017 (5962011696017) | 5915-01-146-2958 (5915011462958) | 5950-00-896-9834 (5950008969834) | 5905-00-556-4678 (5905005564678) | |
| 5998-00-712-1477 (5998007121477) | 5910-01-451-0415 (5910014510415) | 5935-00-642-0626 (5935006420626) | 5995-00-204-6469 (5995002046469) | |
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