| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-292-9209 (012929209) |
| NCB Code | USA (01) |
| Manufacturer | Dla Land And Maritime, Raytheon Company, Advanced Micro Devices Inc, National Semiconductor Corporation, University Of Texas At Austin, Military Specifications, Texas Instruments Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 5962-87690 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8769002RA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8769002RB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8769002RX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 72-00745-107 | raytheon company | microcircuit memory | 00724 | RFQ |
| AM27S29A BRA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM27S29DC | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM27S29DMB | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| DM54S472J 883 | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| ED1363-001 | university of texas at austin | microcircuit memory | 55354 | RFQ |
| M38510-20805BRX | military specifications | microcircuit memory | 81349 | RFQ |
| ROM PROM HEAD 016 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| SNC54S472J | texas instruments inc | microcircuit memory | 01295 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 880.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -30.00 MILLIAMPERES MINIMUM INPUT AND 5.00 MILLIAMPERES MAXIMUM INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-292-9209, 5962012929209 | ||||
| 5945-00-890-8228 (5945008908228) | 5998-01-466-4292 (5998014664292) | 5935-00-109-1991 (5935001091991) | 5905-00-978-7527 (5905009787527) | |
| 5935-01-589-2435 (5935015892435) | 5961-01-058-7929 (5961010587929) | 5910-01-261-9535 (5910012619535) | 5970-01-493-4527 (5970014934527) | |
| 5950-01-173-9025 (5950011739025) | 5905-00-051-2316 (5905000512316) | 5935-01-363-5367 (5935013635367) | 5905-01-128-9446 (5905011289446) | |
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