If you are looking for NSN 5962-01-184-1162 supplies, turn to Boost AOG and our vast collection of offerings. On this page, we have arranged our NSN 5962-01-184-1162 inventory, where part numbers like 14H4, 48-066386-02, 5962-3850303BRA, 5962-3850303BRB, 5962-3850303BRX, and others are presented alongside relevant information about this NSN for your perusal. Take the time to browse our ever-expanding selection of components as you see fit, and if any particular items pique your interest, be sure to use our online RFQ service to request quotes for your consideration.
All manufacturers and suppliers whose parts we sell are carefully evaluated by our staff as necessary, and a myriad of products we carry are subjected to diverse levels of testing and inspection for fit, form, and function. Additionally, we are fully committed to addressing the time limitations of our customers who shop on Boost AOG, providing options for accelerated shipping based on availability. Keeping this in mind, do not hesitate to reach out to us directly by phone or email, and our knowledgeable team members would be more than happy to help you obtain the NSN 5962-01-184-1162 parts you desire.
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-184-1162 (011841162) |
| NCB Code | USA (01) |
| Manufacturer | Mmi Amd, Northrop Grumman Systems Corporation, Military Specifications, Dla Land And Maritime, Lockheed Martin Corporation, National Semiconductor Corporation, Advanced Micro Devices Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 14H4 | mmi amd | microcircuit memory | 50364 | RFQ |
| 48-066386-02 | northrop grumman systems corporation | microcircuit memory | 15280 | RFQ |
| 5962-3850303BRA | military specifications | microcircuit memory | 81349 | RFQ |
| 5962-3850303BRB | military specifications | microcircuit memory | 81349 | RFQ |
| 5962-3850303BRX | military specifications | microcircuit memory | 81349 | RFQ |
| 5962-8103503BRB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8103503BRX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 7908688-05 | lockheed martin corporation | microcircuit memory | 90536 | RFQ |
| 81035 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 8103503RB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| DMPAL14H4J | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| DMPAL14H4J 883 | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| DMPAL14H4MJ 883B | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| M38510/50303BRA | military specifications | microcircuit memory | 81349 | RFQ |
| M38510/50303BRX | military specifications | microcircuit memory | 81349 | RFQ |
| MIL-M-38510/503 | military specifications | microcircuit memory | 81349 | RFQ |
| PAL14H4 | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| PAL14H4 | mmi amd | microcircuit memory | 50364 | RFQ |
| PAL14H4MJ | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| PAL14H4MJ | mmi amd | microcircuit memory | 50364 | RFQ |
| PAL14H4MJ 883B | mmi amd | microcircuit memory | 50364 | RFQ |
| PAL14H4MJ 883B | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| ROM-PROM HEAD 060 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND HERMETICALLY SEALED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CQZP | INPUT CIRCUIT PATTERN | 28 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PAL |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/503 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-184-1162, 5962011841162 | ||||
| 5955-01-394-8402 (5955013948402) | 5975-00-503-4697 (5975005034697) | 5935-01-509-7638 (5935015097638) | 5905-00-412-0558 (5905004120558) | |
| 5962-01-454-3665 (5962014543665) | 5975-01-276-0554 (5975012760554) | 5940-01-614-8435 (5940016148435) | 5920-01-112-9211 (5920011129211) | |
| 5962-01-315-6625 (5962013156625) | 5999-01-314-6189 (5999013146189) | 5998-01-041-3296 (5998010413296) | 5998-00-168-8801 (5998001688801) | |
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