If you are looking for NSN 5962-01-177-5400 supplies, turn to Boost AOG and our vast collection of offerings. On this page, we have arranged our NSN 5962-01-177-5400 inventory, where part numbers like 1818-1768, 28734-1600-0001, 31 215-009, 4056546-0701, 42550-0000-0228, and others are presented alongside relevant information about this NSN for your perusal. Take the time to browse our ever-expanding selection of components as you see fit, and if any particular items pique your interest, be sure to use our online RFQ service to request quotes for your consideration.
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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-177-5400 (011775400) |
| NCB Code | USA (01) |
| Manufacturer | Hewlett-Packard Company, Thales Uk Ltd, Rockwell Collins Aerospace, Raytheon Company, Nice Cti Systems Uk Ltd, Integrated Device Technology Inc, Raytheon E Systems Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1818-1768 | hewlett-packard company | microcircuit memory | 28480 | RFQ |
| 28734-1600-0001 | thales uk ltd | microcircuit memory | u4338 | RFQ |
| 31 215-009 | rockwell collins aerospace | microcircuit memory | d9853 | RFQ |
| 4056546-0701 | raytheon company | microcircuit memory | 06845 | RFQ |
| 42550-0000-0228 | thales uk ltd | microcircuit memory | u4338 | RFQ |
| CAT19613 | nice cti systems uk ltd | microcircuit memory | u2089 | RFQ |
| G228875-1 | raytheon company | microcircuit memory | 49956 | RFQ |
| IDT6116L-120-DB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
| IDT6116L1120DB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
| IDT6116L150CB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
| IDT6116LA120DB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
| MC-E0024-001 | raytheon e systems inc | microcircuit memory | 33875 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | AN/GPN-22(V) RADAR DATA TRANSFER,SUBSYSTEM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION AND W/ENABLE AND BIDIRECTIONAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-177-5400, 5962011775400 | ||||
| 5998-01-178-1101 (5998011781101) | 5945-00-227-6994 (5945002276994) | 5945-01-348-7837 (5945013487837) | 5985-00-257-6768 (5985002576768) | |
| 5999-01-315-9488 (5999013159488) | 5930-01-029-6005 (5930010296005) | 5950-00-489-6997 (5950004896997) | 5998-01-281-0645 (5998012810645) | |
| 5930-01-641-9893 (5930016419893) | 5915-01-267-7860 (5915012677860) | 5985-01-663-5058 (5985016635058) | 5963-01-649-9408 (5963016499408) | |
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