Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-412-6886 (014126886) |
NCB Code | USA (01) |
Manufacturer | Herley Industries Inc, Avago Technologies Us Inc, Hewlett-Packard Company, Rockwell Collins Aerospace, Interlink Communications Inc, Wavetek Rf Products Inc, Lockheed Martin Corporation, Raytheon Company, Frequency Electronics Inc, Military Specifications, Joint Army-Navy Specifications |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
101442-1 | herley industries inc | semiconductor device diode | 24469 | RFQ |
1N5711 1N6263 | avago technologies us inc | semiconductor device diode | 50434 | RFQ |
1N5711 1N6263 | hewlett-packard company | semiconductor device diode | 28480 | RFQ |
353-3691-012 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
40-001020-01 | interlink communications inc | semiconductor device diode | 30890 | RFQ |
4809-02-0001 | wavetek rf products inc | semiconductor device diode | 34280 | RFQ |
5082-2800 | avago technologies us inc | semiconductor device diode | 50434 | RFQ |
5082-2800 | hewlett-packard company | semiconductor device diode | 28480 | RFQ |
7849788P001 | lockheed martin corporation | semiconductor device diode | 03538 | RFQ |
925974-1B | raytheon company | semiconductor device diode | 82577 | RFQ |
A2S800 | frequency electronics inc | semiconductor device diode | 14844 | RFQ |
HP5082-2146 | hewlett-packard company | semiconductor device diode | 28480 | RFQ |
JAN1N5711 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N5711 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
JANTX1N5711 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N5711-1 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX5711 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-PRF-19500/444 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/444 | military specifications | semiconductor device diode | 81349 | RFQ |
TX1N5711 | military specifications | semiconductor device diode | 81349 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
CTQN | Voltage Rating In Volts Per Characteristic | 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
AXGY | Mounting Method | TERMINAL |
AFZC | Function For Which Designed | SWITCHING |
CTSG | Maximum Operating Temp Per Measurement Point | 150.0 DEG CELSIUS JUNCTION |
CTQX | Current Rating Per Characteristic | 33.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
TEST | Test Data Document | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
ABHP | Overall Length | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
ABBH | Inclosure Material | GLASS |
TTQY | Terminal Type And Quantity | 2 UNINSULATED WIRE LEAD |
ABJT | Terminal Length | 1.000 INCHES MINIMUM |
ADAV | Overall Diameter | 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM |
MRC | Decoded Requirement | Clear Text Reply |
CTMZ | Semiconductor Material | SILICON |
Relevant Components for NSN - 5961-01-412-6886, 5961014126886 | ||||
5910-01-688-4071 (5910016884071) | 5995-00-727-4964 (5995007274964) | 5995-01-640-9068 (5995016409068) | 5930-01-315-9709 (5930013159709) | |
5962-01-517-9447 (5962015179447) | 5960-01-340-3060 (5960013403060) | 5935-01-332-8011 (5935013328011) | 5998-01-417-1489 (5998014171489) | |
5905-00-102-5595 (5905001025595) | 5905-00-755-0964 (5905007550964) | 5998-01-029-5116 (5998010295116) | 5935-00-504-5828 (5935005045828) | |
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