If you are looking for NSN 5961-01-126-3009 supplies, turn to Boost AOG and our vast collection of offerings. On this page, we have arranged our NSN 5961-01-126-3009 inventory, where part numbers like 1-4M2-4AZ, 10133275, 1900-3002, 1902-3002, 353-8503-180, and others are presented alongside relevant information about this NSN for your perusal. Take the time to browse our ever-expanding selection of components as you see fit, and if any particular items pique your interest, be sure to use our online RFQ service to request quotes for your consideration.
All manufacturers and suppliers whose parts we sell are carefully evaluated by our staff as necessary, and a myriad of products we carry are subjected to diverse levels of testing and inspection for fit, form, and function. Additionally, we are fully committed to addressing the time limitations of our customers who shop on Boost AOG, providing options for accelerated shipping based on availability. Keeping this in mind, do not hesitate to reach out to us directly by phone or email, and our knowledgeable team members would be more than happy to help you obtain the NSN 5961-01-126-3009 parts you desire.
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-126-3009 (011263009) |
| NCB Code | USA (01) |
| Manufacturer | Freescale Semiconductor Inc, Nimikkeistokeskus Ncb Finland, Avago Technologies Us Inc, Hewlett-Packard Company, Rockwell Collins Aerospace, Raytheon Company, Inspektorat Wsparcia Sil Zbrojnych, Hamilton Sundstrand Corporation, Lockheed Martin Corporation, Delco Electronics Corp, Telcom Semiconductor Inc, Microsemi Corporation, Military Specifications |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1-4M2-4AZ | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 10133275 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 1900-3002 | avago technologies us inc | semiconductor device diode | 50434 | RFQ |
| 1900-3002 | hewlett-packard company | semiconductor device diode | 28480 | RFQ |
| 1902-3002 | hewlett-packard company | semiconductor device diode | 28480 | RFQ |
| 353-8503-180 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 418715-66 | raytheon company | semiconductor device diode | 96214 | RFQ |
| 5961PL1262236 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 5E4820 51 1001 | hamilton sundstrand corporation | semiconductor device diode | 73030 | RFQ |
| 77C953324P79 | lockheed martin corporation | semiconductor device diode | 03538 | RFQ |
| 7890071-201 | delco electronics corp | semiconductor device diode | 99974 | RFQ |
| CD35526 | telcom semiconductor inc | semiconductor device diode | 15818 | RFQ |
| CD35526 | microsemi corporation | semiconductor device diode | 14552 | RFQ |
| JAN1N4370A | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N4370A | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| JANTX1N4370A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
| ST7890071-201 | delco electronics corp | semiconductor device diode | 99974 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.4 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 155.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-126-3009, 5961011263009 | ||||
| 5905-01-333-0379 (5905013330379) | 5905-01-073-6984 (5905010736984) | 5905-01-101-7732 (5905011017732) | 5998-01-283-3416 (5998012833416) | |
| 5935-01-225-8978 (5935012258978) | 5930-01-276-8776 (5930012768776) | 5935-01-302-0287 (5935013020287) | 5940-00-144-1527 (5940001441527) | |
| 5970-00-211-5738 (5970002115738) | 5975-01-458-4880 (5975014584880) | 5970-00-194-3070 (5970001943070) | 5996-01-370-7251 (5996013707251) | |
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