If you are looking for NSN 5961-01-102-2873 supplies, turn to Boost AOG and our vast collection of offerings. On this page, we have arranged our NSN 5961-01-102-2873 inventory, where part numbers like 10133204, 1196030P8, 353-8503-310, 4037937-511, 5961PL0190494, and others are presented alongside relevant information about this NSN for your perusal. Take the time to browse our ever-expanding selection of components as you see fit, and if any particular items pique your interest, be sure to use our online RFQ service to request quotes for your consideration.
All manufacturers and suppliers whose parts we sell are carefully evaluated by our staff as necessary, and a myriad of products we carry are subjected to diverse levels of testing and inspection for fit, form, and function. Additionally, we are fully committed to addressing the time limitations of our customers who shop on Boost AOG, providing options for accelerated shipping based on availability. Keeping this in mind, do not hesitate to reach out to us directly by phone or email, and our knowledgeable team members would be more than happy to help you obtain the NSN 5961-01-102-2873 parts you desire.
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-102-2873 (011022873) |
| NCB Code | USA (01) |
| Manufacturer | Nimikkeistokeskus Ncb Finland, Bae Systems Inc, Rockwell Collins Aerospace, Honeywell International Inc, Inspektorat Wsparcia Sil Zbrojnych, Hamilton Sundstrand Corporation, Interstate Electronics Corporation, Lockheed Martin Corporation, Northrop Grumman Systems Corporation, Leonardo Mw Ltd, Military Specifications, Joint Army-Navy Specifications, Trw Electronic Components |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 10133204 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 1196030P8 | bae systems inc | semiconductor device diode | 94117 | RFQ |
| 353-8503-310 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 4037937-511 | honeywell international inc | semiconductor device diode | 07187 | RFQ |
| 5961PL0190494 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 5E4820 51 1014 | hamilton sundstrand corporation | semiconductor device diode | 73030 | RFQ |
| 7443300 FIND NO 029 | interstate electronics corporation | semiconductor device diode | 07421 | RFQ |
| 7908415-30 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
| 947299-7566 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| 995-9502-027 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| CS-705002-16 | leonardo mw ltd | semiconductor device diode | u2248 | RFQ |
| JANTX1N756A | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N756A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N756A1 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| JANTX1N9658 | military specifications | semiconductor device diode | 81349 | RFQ |
| LVA82A | trw electronic components | semiconductor device diode | 01281 | RFQ |
| MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-102-2873, 5961011022873 | ||||
| 5950-00-183-9362 (5950001839362) | 5950-00-193-0574 (5950001930574) | 5998-01-333-4985 (5998013334985) | 5998-00-310-3152 (5998003103152) | |
| 5930-00-695-3915 (5930006953915) | 5945-01-329-1149 (5945013291149) | 5998-01-043-2686 (5998010432686) | 5955-01-141-5223 (5955011415223) | |
| 5962-00-105-6730 (5962001056730) | 5998-01-364-3259 (5998013643259) | 5935-00-242-1981 (5935002421981) | 5950-01-330-5414 (5950013305414) | |
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