If you are looking for NSN 5961-01-070-8942 supplies, turn to Boost AOG and our vast collection of offerings. On this page, we have arranged our NSN 5961-01-070-8942 inventory, where part numbers like 10133184, 123102, 13220E4188, 135A912008, 1534864-13, and others are presented alongside relevant information about this NSN for your perusal. Take the time to browse our ever-expanding selection of components as you see fit, and if any particular items pique your interest, be sure to use our online RFQ service to request quotes for your consideration.
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| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-070-8942 (010708942) |
| NCB Code | USA (01) |
| Manufacturer | Nimikkeistokeskus Ncb Finland, Honeywell International Inc, Cecom Lr Center, Northrop Grumman Systems Corporation, Allied Signal Inc, Scientific Atlanta Inc, Western Semiconductors Div, Semiconductor Components Industries, C O D I Corp, Electronic Industries Inc, Itt Semiconductors, Infineon Technologies, Texas Instruments Inc, L 3 Communications Corporation, Military Specifications, Raytheon Company, Astronics Test Systems Inc, Cmc Electronics Inc, Rockwell Collins Aerospace, General Dynamics Information Systems, Inspektorat Wsparcia Sil Zbrojnych, Hamilton Sundstrand Corporation, Lockheed Martin Corporation, Military Standards Corp, Joint Army-Navy Specifications, Trw Electronic Components |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 10133184 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 123102 | honeywell international inc | semiconductor device diode | 17479 | RFQ |
| 13220E4188 | cecom lr center | semiconductor device diode | 97403 | RFQ |
| 135A912008 | northrop grumman systems corporation | semiconductor device diode | 03956 | RFQ |
| 1534864-13 | honeywell international inc | semiconductor device diode | 64547 | RFQ |
| 1534864-27 | allied signal inc | semiconductor device diode | 83298 | RFQ |
| 163961 | scientific atlanta inc | semiconductor device diode | 10110 | RFQ |
| 1884272 ITEM 14 | northrop grumman systems corporation | semiconductor device diode | 03956 | RFQ |
| 1N1932A | western semiconductors div | semiconductor device diode | 12711 | RFQ |
| 1N1932A | semiconductor components industries | semiconductor device diode | 12102 | RFQ |
| 1N1932A | c o d i corp | semiconductor device diode | 16352 | RFQ |
| 1N1932A | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N1932A | itt semiconductors | semiconductor device diode | 14433 | RFQ |
| 1N3518 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N714 | infineon technologies | semiconductor device diode | 81483 | RFQ |
| 1N758A | texas instruments inc | semiconductor device diode | 01295 | RFQ |
| 1N758A | l 3 communications corporation | semiconductor device diode | 23974 | RFQ |
| 1N758B | military specifications | semiconductor device diode | 81349 | RFQ |
| 20-00131-032 | raytheon company | semiconductor device diode | 00724 | RFQ |
| 220004 | astronics test systems inc | semiconductor device diode | 21793 | RFQ |
| 294-990033-543 | cmc electronics inc | semiconductor device diode | 38753 | RFQ |
| 353-8503-330 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 4037937-513 | honeywell international inc | semiconductor device diode | 07187 | RFQ |
| 418715-64 | raytheon company | semiconductor device diode | 96214 | RFQ |
| 50240113 | general dynamics information systems | semiconductor device diode | 09639 | RFQ |
| 5961PL0716843 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 5E4820 51-1016 | hamilton sundstrand corporation | semiconductor device diode | 73030 | RFQ |
| 632638-112 | northrop grumman systems corporation | semiconductor device diode | 03956 | RFQ |
| 7908415-32 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
| 900120-239REVF | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| 980731-1 | raytheon company | semiconductor device diode | 49956 | RFQ |
| 995-9502-028 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| IN961B | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N758A | c o d i corp | semiconductor device diode | 16352 | RFQ |
| JAN1N758A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N961A | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N758 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N758A | military standards corp | semiconductor device diode | 96906 | RFQ |
| JANTX1N758A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N758A1 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| JEDEC 1N758A | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
| PS18260A | trw electronic components | semiconductor device diode | 01281 | RFQ |
| RELEASE4198 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| TX1N758A | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 40.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-070-8942, 5961010708942 | ||||
| 5962-01-696-0469 (5962016960469) | 5995-01-601-3378 (5995016013378) | 5962-01-265-3602 (5962012653602) | 5998-00-867-5595 (5998008675595) | |
| 5940-01-258-2108 (5940012582108) | 5999-33-201-4270 (5999332014270) | 5915-01-662-9988 (5915016629988) | 5930-01-050-4111 (5930010504111) | |
| 5998-01-367-2904 (5998013672904) | 5998-01-474-9678 (5998014749678) | 5930-01-242-5664 (5930012425664) | 5905-01-255-5908 (5905012555908) | |
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