If you are looking for NSN 5961-01-064-4875 supplies, turn to Boost AOG and our vast collection of offerings. On this page, we have arranged our NSN 5961-01-064-4875 inventory, where part numbers like 1076-316REVB, 1299116-28, 1951221-19, 1N963A, 1N963B-1, and others are presented alongside relevant information about this NSN for your perusal. Take the time to browse our ever-expanding selection of components as you see fit, and if any particular items pique your interest, be sure to use our online RFQ service to request quotes for your consideration.
All manufacturers and suppliers whose parts we sell are carefully evaluated by our staff as necessary, and a myriad of products we carry are subjected to diverse levels of testing and inspection for fit, form, and function. Additionally, we are fully committed to addressing the time limitations of our customers who shop on Boost AOG, providing options for accelerated shipping based on availability. Keeping this in mind, do not hesitate to reach out to us directly by phone or email, and our knowledgeable team members would be more than happy to help you obtain the NSN 5961-01-064-4875 parts you desire.
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-064-4875 (010644875) |
| NCB Code | USA (01) |
| Manufacturer | Bae Systems Inc, Honeywell International Inc, Electronic Industries Inc, Fairchild Semiconductor Corp, Freescale Semiconductor Inc, Rockwell Collins Aerospace, Raytheon Company, Inspektorat Wsparcia Sil Zbrojnych, Hamilton Sundstrand Corporation, E2v Semiconductors, Telcom Semiconductor Inc, Military Specifications |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1076-316REVB | bae systems inc | semiconductor device diode | 72314 | RFQ |
| 1299116-28 | honeywell international inc | semiconductor device diode | 55972 | RFQ |
| 1951221-19 | honeywell international inc | semiconductor device diode | 55972 | RFQ |
| 1N963A | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N963B-1 | fairchild semiconductor corp | semiconductor device diode | 07263 | RFQ |
| 1N963B-1JTX | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 353-2606-001 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 353-8505-430 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 418036-126 | raytheon company | semiconductor device diode | 96214 | RFQ |
| 5961PL1454798 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 5R4820-020-1002 | hamilton sundstrand corporation | semiconductor device diode | 73030 | RFQ |
| BZX55C12 | e2v semiconductors | semiconductor device diode | f8385 | RFQ |
| CD4117 | telcom semiconductor inc | semiconductor device diode | 15818 | RFQ |
| CZL14JX963B1 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN-TX1N963B | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N963B-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N963B-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/117 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/117 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 160.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/117E GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-064-4875, 5961010644875 | ||||
| 5998-01-178-1101 (5998011781101) | 5945-00-227-6994 (5945002276994) | 5945-01-348-7837 (5945013487837) | 5985-00-257-6768 (5985002576768) | |
| 5999-01-315-9488 (5999013159488) | 5930-01-029-6005 (5930010296005) | 5950-00-489-6997 (5950004896997) | 5998-01-281-0645 (5998012810645) | |
| 5930-01-641-9893 (5930016419893) | 5915-01-267-7860 (5915012677860) | 5985-01-663-5058 (5985016635058) | 5963-01-649-9408 (5963016499408) | |
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