If you are looking for NSN 5961-00-903-2990 supplies, turn to Boost AOG and our vast collection of offerings. On this page, we have arranged our NSN 5961-00-903-2990 inventory, where part numbers like 101000090, 10102, 11-13295-00, 152-0278-00, 1N4372A, and others are presented alongside relevant information about this NSN for your perusal. Take the time to browse our ever-expanding selection of components as you see fit, and if any particular items pique your interest, be sure to use our online RFQ service to request quotes for your consideration.
All manufacturers and suppliers whose parts we sell are carefully evaluated by our staff as necessary, and a myriad of products we carry are subjected to diverse levels of testing and inspection for fit, form, and function. Additionally, we are fully committed to addressing the time limitations of our customers who shop on Boost AOG, providing options for accelerated shipping based on availability. Keeping this in mind, do not hesitate to reach out to us directly by phone or email, and our knowledgeable team members would be more than happy to help you obtain the NSN 5961-00-903-2990 parts you desire.
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-903-2990 (009032990) |
| NCB Code | USA (00) |
| Manufacturer | Data General Corp, Xerox Corporation, Compaq Federal Llc, Tektronix Gmbh, Electronic Industries Inc, Freescale Semiconductor Inc, Telcom Semiconductor Inc, Military Specifications, Bae Systems Inc, Lockheed Martin Corporation, Rockwell Collins Aerospace, Elettronica Gmbh, Eca Etablissement Central Des, Adelco Elektronik Gmbh, Epcos Ag |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 101000090 | data general corp | semiconductor device diode | 34984 | RFQ |
| 10102 | xerox corporation | semiconductor device diode | 51553 | RFQ |
| 11-13295-00 | compaq federal llc | semiconductor device diode | 15476 | RFQ |
| 152-0278-00 | tektronix gmbh | semiconductor device diode | 80009 | RFQ |
| 1N4372A | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N4372A | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 1N4372A | telcom semiconductor inc | semiconductor device diode | 15818 | RFQ |
| 1N4372A | military specifications | semiconductor device diode | 81349 | RFQ |
| 200441-034 | bae systems inc | semiconductor device diode | 81413 | RFQ |
| 237603 | lockheed martin corporation | semiconductor device diode | 49671 | RFQ |
| 353-3615-010 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 521-024-012 | elettronica gmbh | semiconductor device diode | c3141 | RFQ |
| 5961009032990 | eca etablissement central des | semiconductor device diode | scy13 | RFQ |
| 7538002P072 | bae systems inc | semiconductor device diode | 94117 | RFQ |
| JAN1N4372 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N4372A | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N4372AA | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
| MILS19500-127 | military specifications | semiconductor device diode | 81349 | RFQ |
| Q68000-A2887-Z | epcos ag | semiconductor device diode | d1180 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 1.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-903-2990, 5961009032990 | ||||
| 5935-01-653-6676 (5935016536676) | 5995-01-105-7504 (5995011057504) | 5975-01-415-2357 (5975014152357) | 5999-01-075-4387 (5999010754387) | |
| 5955-01-642-3824 (5955016423824) | 5995-01-282-6623 (5995012826623) | 5999-00-678-2672 (5999006782672) | 5962-01-262-0186 (5962012620186) | |
| 5935-01-208-6343 (5935012086343) | 5999-01-095-3494 (5999010953494) | 5961-01-094-8785 (5961010948785) | 5935-00-280-2838 (5935002802838) | |
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