If you are looking for NSN 5961-00-702-3435 supplies, turn to Boost AOG and our vast collection of offerings. On this page, we have arranged our NSN 5961-00-702-3435 inventory, where part numbers like 106681, 107X00026, 13E13600-003, 1N3600, 1N3600A29, and others are presented alongside relevant information about this NSN for your perusal. Take the time to browse our ever-expanding selection of components as you see fit, and if any particular items pique your interest, be sure to use our online RFQ service to request quotes for your consideration.
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Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-702-3435 (007023435) |
NCB Code | USA (00) |
Manufacturer | Itt Telecom Products Corp, Computer Consoles Inc, General Dynamics Mission Systems, Texas Instruments Inc, Military Specifications, Joint Army-Navy Specifications, Eck And Krebs Scientific Laboratory, Electronic Industries Inc, Thales Nederland Bv, Rockwell Collins Aerospace, Raytheon Company, Airbus Defence And Space Limited, Inspektorat Wsparcia Sil Zbrojnych, Northern Telecom Systems Corp, Lockheed Martin Corporation, Thales Defense And Security Inc, Litton Systems Inc, Fairchild Semiconductor Corp, Adelco Elektronik Gmbh |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
106681 | itt telecom products corp | semiconductor device diode | 21340 | RFQ |
107X00026 | computer consoles inc | semiconductor device diode | 14635 | RFQ |
13E13600-003 | general dynamics mission systems | semiconductor device diode | 04655 | RFQ |
1N3600 | texas instruments inc | semiconductor device diode | 01295 | RFQ |
1N3600 | military specifications | semiconductor device diode | 81349 | RFQ |
1N3600 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
1N3600 | eck and krebs scientific laboratory | semiconductor device diode | 07623 | RFQ |
1N3600A29 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
352250010124 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
353-9008-011 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
4178600-341 | raytheon company | semiconductor device diode | 05869 | RFQ |
5800583-926201.205 | airbus defence and space limited | semiconductor device diode | c0426 | RFQ |
5961PL0808033 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
752-6394 | northern telecom systems corp | semiconductor device diode | 62143 | RFQ |
7900106-00 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
848060-0001 | thales defense and security inc | semiconductor device diode | 65597 | RFQ |
908705-1 | raytheon company | semiconductor device diode | 82577 | RFQ |
947099-6000 | litton systems inc | semiconductor device diode | 13973 | RFQ |
947179-600 | litton systems inc | semiconductor device diode | 13973 | RFQ |
947179-6000 | litton systems inc | semiconductor device diode | 13973 | RFQ |
FD6529 | fairchild semiconductor corp | semiconductor device diode | 13715 | RFQ |
JAN1N3600 | military specifications | semiconductor device diode | 81349 | RFQ |
JAN1N3600 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
JAN1N3600A | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
MIL-PRF-19500/231 | military specifications | semiconductor device diode | 81349 | RFQ |
SSNIN3600 | military specifications | semiconductor device diode | 81349 | RFQ |
USN1N3600 | military specifications | semiconductor device diode | 81349 | RFQ |
VBE890-1N3600 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.056 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM BREAKDOWN VOLTAGE,DC AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/231 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-00-702-3435, 5961007023435 | ||||
5905-01-333-0379 (5905013330379) | 5905-01-073-6984 (5905010736984) | 5905-01-101-7732 (5905011017732) | 5998-01-283-3416 (5998012833416) | |
5935-01-225-8978 (5935012258978) | 5930-01-276-8776 (5930012768776) | 5935-01-302-0287 (5935013020287) | 5940-00-144-1527 (5940001441527) | |
5970-00-211-5738 (5970002115738) | 5975-01-458-4880 (5975014584880) | 5970-00-194-3070 (5970001943070) | 5996-01-370-7251 (5996013707251) | |
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