If you are looking for NSN 5961-00-650-9638 supplies, turn to Boost AOG and our vast collection of offerings. On this page, we have arranged our NSN 5961-00-650-9638 inventory, where part numbers like 05-1N5416-X, 100122, 10133114, 1N5416, 353-3734-010, and others are presented alongside relevant information about this NSN for your perusal. Take the time to browse our ever-expanding selection of components as you see fit, and if any particular items pique your interest, be sure to use our online RFQ service to request quotes for your consideration.
All manufacturers and suppliers whose parts we sell are carefully evaluated by our staff as necessary, and a myriad of products we carry are subjected to diverse levels of testing and inspection for fit, form, and function. Additionally, we are fully committed to addressing the time limitations of our customers who shop on Boost AOG, providing options for accelerated shipping based on availability. Keeping this in mind, do not hesitate to reach out to us directly by phone or email, and our knowledgeable team members would be more than happy to help you obtain the NSN 5961-00-650-9638 parts you desire.
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-650-9638 (006509638) |
| NCB Code | USA (00) |
| Manufacturer | Boeing Aerostructures Australia Pty Ltd, National Micronetics Inc, Nimikkeistokeskus Ncb Finland, Semtech Corporation, Rockwell Collins Aerospace, Elettronica Gmbh, Texas Instruments Inc, Northrop Grumman Systems Corporation, Thales Sa, Thales Systemes Aeroportes Sas, Rohde And Schwarz Inc, Mbda Incorporated, Military Specifications, Adelco Elektronik Gmbh |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 05-1N5416-X | boeing aerostructures australia pty ltd | semiconductor device diode | 94987 | RFQ |
| 100122 | national micronetics inc | semiconductor device diode | 33821 | RFQ |
| 10133114 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 1N5416 | semtech corporation | semiconductor device diode | 14099 | RFQ |
| 353-3734-010 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 353-6558-020 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 353-9019-170 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 524-140-091 | elettronica gmbh | semiconductor device diode | c3141 | RFQ |
| 8879000061-1 | texas instruments inc | semiconductor device diode | 57057 | RFQ |
| 944467-4160 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| 99099366 | thales sa | semiconductor device diode | f6481 | RFQ |
| 99099366 | thales systemes aeroportes sas | semiconductor device diode | f0052 | RFQ |
| 99099635 | thales systemes aeroportes sas | semiconductor device diode | f0052 | RFQ |
| 99099635 | thales sa | semiconductor device diode | f6481 | RFQ |
| AG0820400 | rohde and schwarz inc | semiconductor device diode | d0894 | RFQ |
| B84794 | mbda incorporated | semiconductor device diode | k0967 | RFQ |
| JANTX1N5416 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N5416A | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
| MIL-PRF-19500/411 | military specifications | semiconductor device diode | 81349 | RFQ |
| MILS19500-411 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 80.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/411 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-650-9638, 5961006509638 | ||||
| 5970-01-676-7870 (5970016767870) | 5950-00-689-2758 (5950006892758) | 5935-01-019-5996 (5935010195996) | 5920-00-131-9929 (5920001319929) | |
| 5925-01-059-5726 (5925010595726) | 5935-01-395-7960 (5935013957960) | 5950-00-674-1466 (5950006741466) | 5905-00-456-0621 (5905004560621) | |
| 5995-01-685-2086 (5995016852086) | 5905-00-924-9273 (5905009249273) | 5905-01-062-0495 (5905010620495) | 5950-00-061-8128 (5950000618128) | |
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